HETEROJUNCTION BIPOLAR TRANSISTOR, ITS MANUFACTURING METHOD, AND POWER AMPLIFIER USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor (HBT) capable of making thermal stability compatible with the reliability to energization in the HBT having an InGaP as an emitter layer. SOLUTION: A GaAs layer is inserted between an InGaP emitter layer and an AlGaAs ballast resistance layer, so as to suppress the diffusion and accession of the hole that is reversely injected from a base layer to the AlGaAs ballast resistance layer. COPYRIGHT: (C)2005,JPO&NCIPI