发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
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申请公布号 |
US2008067541(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
US20070928185 |
申请日期 |
2007.10.30 |
申请人 |
TODA TADAO;YAMAGUCHI TSUTOMU;HATA MASAYUKI;NOMURA YASUHIKO |
发明人 |
TODA TADAO;YAMAGUCHI TSUTOMU;HATA MASAYUKI;NOMURA YASUHIKO |
分类号 |
H01L21/285;H01L33/00;H01L33/32;H01L33/40;H01S5/343 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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