发明名称 LOW LATENCY SYNCHRONIZATION SCHEME FOR MESOCHRONOUS DDR SYSTEM
摘要 In one embodiment, a memory interface comprises a cleanup phase-locked loop (PLL) configured to receive a reference clock signal, and to generate a clean clock signal based on the reference clock signal. The memory interface also comprises a synchronization circuit configured to receive data, a data clock signal, and the clean clock signal, wherein the synchronization circuit is further configured to sample the data using the data clock signal, and to synchronize the sampled data with the clean clock signal.
申请公布号 EP3028161(A1) 申请公布日期 2016.06.08
申请号 EP20140748318 申请日期 2014.06.02
申请人 QUALCOMM INCORPORATED 发明人 JOSE, EDWIN;DROP, MICHAEL;HUANG, XUHAO;SANKURATRI, RAGHU;SRIRAMAGIRI, DEEPTI;PEDRALI-NOY, MARZIO
分类号 G06F13/16;G11C7/22 主分类号 G06F13/16
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