| 发明名称 | Electric/magnetic field guided acid profile control in a photoresist layer | ||
| 摘要 | Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate, the method includes applying a photoresist layer comprising a photoacid generator to a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction. | ||
| 申请公布号 | US9366966(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201414478403 | 申请日期 | 2014.09.05 |
| 申请人 | APPLIED MATERIALS, INC. | 发明人 | Xie Peng;Godet Ludovic |
| 分类号 | G03F7/26;G03F7/20 | 主分类号 | G03F7/26 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A method of processing a substrate, the method comprising: applying a photoresist layer comprising a photoacid generator to a substrate; exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process; and applying an electric field and a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction. | ||
| 地址 | Santa Clara CA US | ||