发明名称 Liquid crystal display panel
摘要 The present invention aims to provide a liquid crystal display panel having a structure in which a plurality of gate electrodes are arranged on a continuous semiconductor layer and still capable of suppressing increase of a parasitic capacitance between a source region and a drain region. The liquid crystal display panel of the invention includes a thin film transistor. The thin film transistor includes: a base insulating film; a semiconductor layer extending linearly at least from a first portion to a second portion; a source electrode; a drain electrode; and gate electrodes, respectively, to cover the semiconductor layer with a gate insulating film therebetween. A light shielding film is arranged to cover each projection region corresponding to projection of the gate electrode. The light shielding film is arranged in the form of a plurality of light shielding film elements. The light shielding film elements each cover one or more projection regions.
申请公布号 US9366931(B2) 申请公布日期 2016.06.14
申请号 US201214113127 申请日期 2012.04.18
申请人 SHARP KABUSHIKI KAISHA 发明人 Kaise Yasuyoshi
分类号 G02F1/136;G02F1/1368;H01L27/12;H01L29/786;G02F1/1362 主分类号 G02F1/136
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A liquid crystal display panel, comprising: a first transparent substrate having a main surface which includes a display region having a plurality of pixels; a second transparent substrate arranged opposite to said main surface in at least a region including said display region; and a liquid crystal layer arranged to be sandwiched between said first transparent substrate and said second transparent substrate, thin film transistors associated with said plurality of pixels respectively being provided in said main surface, said thin film transistors each including, in order of closeness to said first transparent substrate: a base insulating film covering at least a part of said main surface; a semiconductor layer extending linearly at least from a first portion to a second portion in plan view to cover a part of said base insulating film; a gate insulating film covering at least a part of said semiconductor layer;a source electrode electrically connected, in said first portion, to said semiconductor layer;a drain electrode electrically connected, in said second portion, to said semiconductor layer; andgate electrodes arranged at two or more locations, respectively, to cover said semiconductor layer with said gate insulating film interposed therebetween, said two or more locations being located along a path extending along said semiconductor layer from said first portion to said second portion in plan view, wherein a light shielding film being arranged between said base insulating film and said first transparent substrate to cover each projection region of said main surface, said projection region being a region corresponding to projection of said gate electrode on said main surface, said light shielding film being arranged in the form of a plurality of light shielding film elements separated from each other in plan view, said light shielding film elements each covering one or more said projection regions of said gate electrodes, a gate line extending in a first direction and a source line extending in a second direction perpendicular to said first direction, the source line being electrically connected to said source electrode, both of the gate line and the source line are arranged in said main surface, said gate electrode is electrically connected with said gate line or is a part of said gate line, and said path at least partially overlaps said source line and at least one of said light shielding film elements is at a location overlapping said source line in plan view.
地址 Osaka JP