THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME

摘要

The present invention provides a thin film transistor characterized by comprising: a gate electrode formed on a substrate; a gate insulating film formed on the entire surface of the substrate including the gate electrode; a first active layer formed to correspond to the gate electrode on the gate insulating film; a second active layer formed on the top or bottom of the first active layer; and a source electrode and a drain electrode formed to have a certain distance from so as to be connected to the first active layer or the second active layer.