Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal

摘要

Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following Z1>0 expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2<0 expression (2), wherein Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate.

主权项

1. A method for producing a light-emitting semiconductor element or a semiconductor device, which comprises growing a Group-III nitride crystal on a growth surface of a single-crystal substrate, wherein the single-crystal substrate satisfies the following expressions (1) and (2) and has a back surface of concave shape, wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single crystal substrate:
Z1>0  Expression (1) Z2<0  Expression (2).