Self aligned replacement metal source/drain finFET

摘要

A method of a fin-shaped field effect transistor (finFET) device includes forming at least one fin that extends in a first direction; covering the fin with a dummy gate stack that extends in a second direction perpendicular to the first direction and that divides the at least one fin into source and drain regions on opposing sides of the replacement gate stack; covering the source and drain regions with an interlayer dielectric; replacing the dummy gate stack with a replacement metal gate stack; performing a first anneal at a first temperature after the replacement metal gate stack has replaced the dummy gate stack; and after performing the first anneal: recessing a top portion of the interlayer dielectric; and forming metallic source and drain regions.

主权项

1. A method of forming a fin-shaped field effect transistor (finFET) device, the method comprising:
forming at least one fin that extends in a first direction; covering the fin with a dummy gate stack that extends in a second direction perpendicular to the first direction and that divides the at least one fin into source and drain regions on opposing sides of the dummy gate stack; covering the source and drain regions with an interlayer dielectric; replacing the dummy gate stack with a replacement metal gate stack; performing a first anneal at a first temperature after the replacement metal gate stack has replaced the dummy gate stack; after performing the first anneal: recessing a top portion of the interlayer dielectric; and forming metallic source and drain regions.