Adaptive fin design for FinFETs

摘要

A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer.

主权项

1. An integrated circuit structure comprising:
a semiconductor substrate; a plurality of semiconductor fins, wherein the plurality of semiconductor fins is parallel to each other, and wherein the plurality of semiconductor fins has a first fin pitch and a second fin pitch different from each other, and a third fin pitch greater than both the first fin pitch and the second fin pitch; and a plurality of metal lines over the plurality of semiconductor fins, with the plurality of metal lines being in a bottom metal layer of the integrated circuit structure, wherein the plurality of metal lines is parallel to each other, and wherein a minimum metal pitch of the plurality of metal lines is greater than a minimum fin pitch of the plurality of semiconductor fins.