| 主权项 |
1. A solid-state imaging device comprising:
a pixel signal processing unit includes:
a plurality of pixels in which photoelectric conversion units generating first signal charges obtained by photoelectrically converting incident light are disposed in a matrix;a plurality of first charge storage circuits which are configured to hold the first signal charges generated by the photoelectric conversion units and output first signal voltages as first pixel signals, the first signal voltages being generated based on the held first signal charges; anda plurality of second charge storage circuits which are configured to hold second signal charges based on the first signal charges generated by the photoelectric conversion units in the plurality of pixels and output second signal voltages as second pixel signals reduced to a pre-determined number of pixels, the second signal voltages being generated based on the held second signal charges, and a differential analog/digital conversion unit includes:
a plurality of first differential calculation units which are configured to output pixel signals as first differential pixel signals, the first differential pixel signals being obtained by calculating differences between the first pixel signals of a corresponding column and the second pixel signals based on the first pixel signals, and the first differential pixel signals being corresponding to each column of the pixels;a plurality of first analog/digital conversion units which are configured to perform analog/digital conversion to the first differential pixel signals output from the corresponding first differential calculation units and output digital values indicating magnitudes of the first differential pixel signals, each of the plurality of the first analog/digital conversion units corresponding to one of the plurality of first differential calculation units; anda plurality of second analog/digital conversion units which are configured to perform analog/digital conversion to the second pixel signals output from the second charge storage circuits of a corresponding column and output digital values indicating magnitudes of the second pixel signals, each of the plurality of second analog/digital conversion units corresponding to one column of the second charge storage circuits, wherein each of the plurality of first analog/digital conversion units outputs a digital value of the number of bits less than the number of bits of a digital value output by each of the plurality of second analog/digital conversion units. |
