SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM

摘要

A solid-state imaging device includes a plurality of pixels in which photoelectric conversion units that generate signal charges are arranged in a matrix, a plurality of first charge accumulation circuits that hold the signal charges and output the signal charges as a first pixel signal, a plurality of charge transfer circuits that transfer the signal charges to the first charge accumulation circuit, and a plurality of second charge accumulation circuits that hold signal charges based on the signal charges generated by the photoelectric conversion units and output the signal charges as a second pixel signal in which the number of pixels is reduced to a predetermined number, and the charge transfer circuit transfers the signal charges in the same exposure period to the second charge accumulation circuit when transferring the signal charges of the same exposure to the first charge accumulation circuit.

主权项

1. A solid-state imaging device, comprising:
a plurality of pixels in which photoelectric conversion units that generate signal charges obtained by photoelectrically converting incident light are arranged in a matrix; a plurality of first charge accumulation circuits that hold the signal charges generated by the photoelectric conversion unit and output a signal voltage according to the held signal charges as a first pixel signal; a plurality of charge transfer circuits that transfer the signal charges generated by the photoelectric conversion unit to the first charge accumulation circuit; and a plurality of second charge accumulation circuits that hold signal charges based on the signal charges generated by the photoelectric conversion units in the plurality of pixels and output a signal voltage according to the held signal charges as a second pixel signal in which the number of pixels is reduced to a predetermined number, wherein the charge transfer circuit transfers the signal charges generated by the corresponding photoelectric conversion unit in the same exposure period to the second charge accumulation circuit when transferring the signal charges of the same exposure to the first charge accumulation circuit.