SEMICONDUCTOR DEVICE WITH A PASSIVATED JUNCTION

摘要

In a semiconductor device the perimeter of a base-emitter junction (Jf) at a surface is protected by a film of silicon nitride (11), preferably formed by a direct nitridation process. A base contact electrode (8) is made of highly doped polysilicon, the surface of which is thermally oxidised to form a silicon dioxide layer (9) which terminates on the silicon nitride film (11) and which separates the base contact electrode (8) from an emitter contact electrode (10). Such a device can be fabricated in a self-alignment fashion using only one lithographic mask to form base and emitter regions and corresponding contacts.