发明名称 |
Method for manufacture of a buried structure laser device for integrated photonic circuit |
摘要 |
A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first guiding layer formed by a non-doped quaternary compound, an extremely thin intermediate layer highly doped with carriers of the first type. A second active layer is formed by a non-doped quaternary compound, and a protection layer is doped with carriers of a second type where only the active layer is etched in the form of one or more steps and then buried in a layer of sheathing doped with carriers of the second type.
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申请公布号 |
US6025207(A) |
申请公布日期 |
2000.02.15 |
申请号 |
US19980073459 |
申请日期 |
1998.05.06 |
申请人 |
FRANCE TELECOM |
发明人 |
MERSALI, BOUMEDIENNE;DORGEUILLE, FRANCOIS |
分类号 |
H01S5/026;H01S5/10;H01S5/20;H01S5/32;H01S5/323;H01S5/50;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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