发明名称 |
LASER DIODE HAVING SEPARATE-CONFINEMENT, HIGHLY STRAINED QUANTUM WELLS |
摘要 |
A semiconductor laser device and method of forming the device is described. The semiconductor laser device is a separate confinement quantum well diode laser for which highly strained compounds are employed as a material for each quantum well. A first device structure includes a quantum well composition range extended from strained ternary compounds employed in conventional quantum well laser devices. A second device structure, employing a similar structure to that of the first device, employs new quasi-ternary compounds for quantum wells in GaSb- or InAs-based laser devices which extend performance of mid-infrared laser devices operating in the 2.2-4.0 mu m range. |
申请公布号 |
WO9957790(A3) |
申请公布日期 |
1999.12.29 |
申请号 |
WO1999US09872 |
申请日期 |
1999.05.06 |
申请人 |
SARNOFF CORPORATION |
发明人 |
GARBUZOV, DMITRI, Z.;CONNOLLY, JOHN, C.;KHALFIN, VIKTOR, B.;LEE, HAO |
分类号 |
H01S5/34;H01S5/343 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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