| 摘要 |
The invention relates to a semiconductor structure and a method for minimising non-idealities in a semiconductor structure, in which a drain, a source, a floating gate (102) and at least one input (108) capacitively connected to the floating gate (102) are disposed on a substrate (105) so as to form a nu -MOSFET transistor. According to the invention, a conductive layer insulated from the floating gate (102) and at least partially superimposed on the gate (102) is formed in the semiconductor structure and the conductive layer is connected to a constant potential. |
