发明名称 |
Light-emitting semiconductor device with a built-in overvoltage protector |
摘要 |
An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.
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申请公布号 |
US2005168899(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050048954 |
申请日期 |
2005.02.02 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
SATO JUNJI;OTSUKA KOJI;MOKU TETSUJI;KATO TAKASHI;NIWA AREI;KAMII YASUHIRO |
分类号 |
H01L27/15;H01L33/00;H02H9/00;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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