发明名称 REAL-TIME MONITORING EQUIPMENT FOR PLASMA PROCESS
摘要 PROBLEM TO BE SOLVED: To obtain a device monitoring a treatment process for a semiconductor wafer installed in plasma treatment equipment at a real time. SOLUTION: Real-time monitoring equipment for a plasma process has a plurality of measurement units 10 stuck on the semiconductor wader 3, a receiver 7 receiving signals transmitted from the measurement units 10, and a data processor 6 detecting the state of the semiconductor wafer 3 on the basis of the received signals. The measurement unit 10 contains at least one plasma-process sensor and a light-emitting element converting an output from the plasma-process sensor into an optical output, and a power supply supplying the light-emitting element with driving power. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005236199(A) 申请公布日期 2005.09.02
申请号 JP20040046385 申请日期 2004.02.23
申请人 HANDOTAI RIKOUGAKU KENKYU CENTER:KK 发明人 SAGAWA SEIJI
分类号 H01L21/3065;G01N21/88;H01J37/32;H01L21/205;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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