| 摘要 |
PROBLEM TO BE SOLVED: To prevent copper deposit which causes a short circuit from remaining in wiring, in a manufacturing method for a semiconductor device which etches an aluminum electric conductive film containing copper by using a hard mask, for the purpose of refined wiring. SOLUTION: The manufacturing method for the semiconductor device comprises: a process for forming an aluminum electric conductive film 3 containing copper on an insulating layer 2 formed on a semiconductor substrate 1; a process for forming a hard mask layer 4 at a temperature wherein the copper does not deposit, and for forming a hard mask pattern 4a on the aluminum electric conductive film 3; and a process for etching the aluminum electric conductive film 3 by using the hard mask pattern 4a as a mask. By lowering the temperature of forming the hard mask pattern 4a, the copper deposit on the aluminum electric conductive film 3 can be suppressed so that the copper deposit might not be arranged between circuit patterns 3a formed by ething. COPYRIGHT: (C)2005,JPO&NCIPI
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