发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To enable a yield to be improved and to enable reliability to be improved by preventing a bonded insulating films from being separated by raising the adhesiveness between the insulating films used for a multilayer wiring structure. SOLUTION: In a semiconductor device 1 having the multilayer wiring structure on a substrate 11, the insulating film for electrically insulating between the wiring layers of the multilayer wiring structure is made of a laminate of the first insulating film 21 and the second insulating film 22. Between the first insulating film 21 and the second insulating film 22, a chemical which raises the adhesiveness of the first insulating film 21 and the second insulating film 22 is applied on the periphery of the first insulating film 21. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005235978(A) 申请公布日期 2005.09.02
申请号 JP20040042452 申请日期 2004.02.19
申请人 SONY CORP 发明人 SHIBUKI SHUNICHI
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/768
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