发明名称 METHOD FOR POLISHING GaN SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide the method of polishing GaN substrate that can suppress generation of grinding scratches. <P>SOLUTION: The polishing method of the GaN substrate is a method of polishing the GaN substrate by using a platen and a polishing liquid, while supplying the polishing liquid containing a polishing material and a lubricant. The polishing method includes a charging step of embedding the polishing material into the platen, and a polishing step of polishing the GaN substrate by using the polishing material embedded platen. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009105440(A) 申请公布日期 2009.05.14
申请号 JP20090023660 申请日期 2009.02.04
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MATSUMOTO NAOKI
分类号 H01L21/304;B24B37/00;B24B37/12 主分类号 H01L21/304
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