| 摘要 |
The application is directed to a process of forming a photomask pattern comprising one or more sub-resolution assist features (SRAF). The process comprises generating a first set of SRAF patterns (22, 24). Each of the SRAF patterns in the first set having a first assigned mask position (26, 28). After the first set of SRAF patterns are generated, determining if the SRAF patterns of the first set comply with a preselected set of rules, wherein one or more of the SRAF patterns are found to be illegal because they do not comply with at least one of the preselected rules. One or more of the illegal SRAF patterns are reassigned to second mask positions that are different from the first mask positions, the second mask positions allowing the illegal SRAF patterns to comply with the at least one preselected rule to form corrected SRAF patterns. The application also discloses systems for generating a sub-resolution assist feature pattern for a photomask, as well as SRAF modules embodied on a computer readable medium comprising instructions operable to carry out the processes of the application. |
