| 摘要 |
PROBLEM TO BE SOLVED: To provide a flat continuous metal-containing thin film with a ruthenium-containing thin film as a lower layer metal film, an to provide a method for producing the same. SOLUTION: Regarding the method for producing a metal-containing thin film using a ruthenium-containing thin film as a lower layer metal film, an organic ruthenium complex is subjected to a chemical vapor deposition process, so as to produce a ruthenium-containing thin film, and then, an organic metal complex is formed on the ruthenium-containing thin film by a CVD process, so as to deposit a metal-containing thin film. COPYRIGHT: (C)2009,JPO&INPIT
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