| 摘要 |
PROBLEM TO BE SOLVED: To provide a flat continuous copper-containing thin film using a ruthenium-containing thin film as a lower layer metal film, and to provide a method for producing the same. SOLUTION: An organic ruthenium complex withβ-diketonato having an alkoxyalkylmethyl group and an unsaturated hydrocarbon compound having at least two double bonds as ligands is subjected to a chemical vapor deposition process, so as to produce a ruthenium-containing thin film. Next, a bis(2,6-dimethyl-2-trimethylsilyloxy-3,5-heptanedionato)copper(II) complex is deposited on the ruthenium-containing thin film by a chemical vapor deposition process, so as to form a copper-containing thin film. COPYRIGHT: (C)2009,JPO&INPIT
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