SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing dispersion in a data erasing characteristic due to a voltage drop of wire resistor. SOLUTION: Each of memory cells 5 includes: a trench 6 formed on an element forming substrate 1; an oxide film 7 formed on the sidewall of the trench 6; a tunnel oxide film 8 formed on the bottom of the trench 6; a floating gate 9 formed in the trench 6 via the oxide film 7 and the tunnel oxide film 8 to write data or read out data; and a back electrode 2 formed on the tunnel oxide film 8 on the opposite side of the floating gate 9 to erase data written in the floating gate 9. When voltage is applied to the back electrode 2 in data erasing, the data stored in respective memory cells 5 can be collectively erased. COPYRIGHT: (C)2009,JPO&INPIT