发明名称 VAPOR GROWTH DEVICE AND VAPOR GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor growth device capable of normally continuing processing in another reaction chamber even in the case of abnormality in one reaction chamber.SOLUTION: The device includes: a plurality of reaction chambers 10a-d; main gas supply passages 11, 21, 31 for supplying a process gas to the reaction chambers; main mass flow controllers 12, 22, 32 which are provided in the main gas supply passages and control the flow rate of the process gas; branch sections 17, 27, 37 for branching the main gas supply passages; secondary gas supply passages 13a-d, 23a-d, 33a-d for supplying the process gas divided by the branch sections; first stop valves 14a-d, 24a-d, 34a-d which are provided in the secondary gas supply passages between the branch sections and the reaction chambers, are arranged so that the distance to the branch section is smaller than the distance to the reaction chamber, and can block flow of the process gas; and secondary mass flow controllers 16a-d, 26a-d, 36a-d which are provided in the secondary gas supply passages between the first stop valves and the reaction chambers and control the flow rate of the process gas.SELECTED DRAWING: Figure 1
申请公布号 JP2016092311(A) 申请公布日期 2016.05.23
申请号 JP20140227546 申请日期 2014.11.07
申请人 NUFLARE TECHNOLOGY INC 发明人 TAKAHASHI HIDESHI;SATO YUSUKE
分类号 H01L21/205;C23C16/34;C23C16/52 主分类号 H01L21/205
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