LIGHT EMITTING DIODE TEST APPARATUS AND TEST METHOD USING THE SAME

摘要

Disclosed are a light emitting diode test apparatus and a method thereof designed to measure a thermal property in a wafer state. The light emitting diode test apparatus according to an embodiment of the present invention comprises: a chamber; a wafer loading table which is installed inside the chamber and is configured to load the wafer; a first wafer test module installed at a distance from the wafer loading table and configured to perform a primary laser irradiation and spectrum measurement at a first temperature with respect to the wafer; a second wafer test module installed at a distance from the first wafer test module and configured to perform a secondary laser irradiation and a spectrum measurement at a second temperature which is higher than the first temperature with respect to the wafer that passes through the first wafer test module; a robot arm configured to sequentially transfer the wafer from the wafer loading table to the first wafer test module and the second wafer test module; and a control unit configured to calculate the first and second measurement values measured at the first and second wafer test modules.