Monolithically integrated active snubber

摘要

A semiconductor device containing an extended drain MOS transistor with an integrated snubber formed by forming a drain drift region of the MOS transistor, forming a snubber capacitor including a capacitor dielectric layer and capacitor plate over the extended drain, and forming a snubber resistor over a gate of the MOS transistor so that the resistor is connected in series between the capacitor plate and a source of the MOS transistor.

主权项

1. A process of forming a semiconductor device, comprising steps:
providing a semiconductor substrate; forming an extended drain metal oxide semiconductor (MOS) transistor, by a process including steps:
forming a drain drift region in said substrate, said drain drift region having a first conductivity type;forming a body region in said substrate, so that said body region abuts said drain drift region at a top surface of said substrate, said body region having a second conductivity type opposite from said first conductivity type;forming a gate over said substrate, so that said gate overlaps a portion of said drain drift region and a portion of said body region; andforming a source region in said substrate adjacent to said gate and opposite from said drain drift region, said source region having said first conductivity type; and forming an integrated snubber, by a process including steps:
forming a snubber capacitor, by a process including steps:
forming a snubber dielectric layer over said drain drift region; andforming a snubber capacitor plate over said snubber dielectric layer; andforming a snubber resistor over said gate, said snubber resistor being electrically coupled to said source region and electrically coupled to said snubber capacitor plate by:
forming at least one snubber capacitor contact through a PMD layer on said snubber capacitor plate, so that said snubber capacitor contact is electrically connected to said snubber capacitor plate;forming at least one snubber source contact through said PMD layer on said source region, so that said snubber source contact is electrically connected to said source region; andforming a snubber resistor link over said PMD layer so that said snubber resistor link makes electrical contact to said snubber capacitor contact and to said snubber source contact.