发明名称 3D semiconductor package interposer with die cavity
摘要 Disclosed herein is a method of forming a device, comprising mounting a plurality of first interconnects on one or more first integrated circuit dies. One or more second integrated circuit dies are mounted on a first side of an interposer. The interposer is mounted to at a second side to the first integrated circuit dies, the plurality of first interconnects disposed outside of the interposer. The interposer is mounted to a first side of a substrate by attaching the first interconnects to the substrate, the substrate in signal communication with one or more of the first integrated circuit dies through the first interconnects.
申请公布号 US9385095(B2) 申请公布日期 2016.07.05
申请号 US201414249637 申请日期 2014.04.10
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Jeng Shin-Puu;Hou Shang-Yun;Chen Kim Hong;Hung Wensen;Huang Szu-Po
分类号 H01L21/00;H01L23/00;H01L23/13;H01L23/498;H01L25/00;H01L23/538;H01L21/683;H01L25/065;H01L25/18;H01L21/56;H01L23/367;H01L23/42;H01L23/31 主分类号 H01L21/00
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A method of forming a device, comprising: mounting a plurality of first interconnects on one or more first integrated circuit dies; mounting one or more second integrated circuit dies on a first side of an interposer; mounting the interposer at a second side to the first integrated circuit dies, the plurality of first interconnects disposed outside of the interposer; and mounting the interposer to a first side of a substrate by attaching the first interconnects to a major surface of the substrate, the substrate in signal communication with one or more of the first integrated circuit dies through the first interconnects, wherein the first interconnects extend from the first integrated circuit dies to the substrate in substantially straight lines that are substantially perpendicular to the major surface of the substrate.
地址 Hsin-Chu TW