| 发明名称 | Semiconductor device and method of manufacturing semiconductor device | ||
| 摘要 | A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a material including InAlN and formed on the first semiconductor layer, an insulator layer formed by an oxidized surface part of the second semiconductor layer, a gate electrode formed on the insulator layer, and a source electrode and a drain electrode respectively formed on the first or second semiconductor layer. | ||
| 申请公布号 | US9412830(B2) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514688031 | 申请日期 | 2015.04.16 |
| 申请人 | FUJITSU LIMITED | 发明人 | Makiyama Kozo;Ozaki Shirou |
| 分类号 | H01L29/51;H01L29/66;H01L21/02;H01L21/311;H01L21/033;H01L29/778;H01L29/20;H01L29/423 | 主分类号 | H01L29/51 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A semiconductor device comprising: a first semiconductor layer made of a nitride semiconductor and formed on a substrate; a second semiconductor layer made of a material including InAlN and formed on the first semiconductor layer; a first insulator layer formed by an oxidized surface part of the second semiconductor layer; a gate electrode formed on the first insulator layer; and a source electrode and a drain electrode respectively formed on the second semiconductor layer, wherein the first insulator layer includes In—O, and more Al—O than the In—O. | ||
| 地址 | Kawasaki JP | ||