Semiconductor device

摘要

A semiconductor device includes a semiconductor substrate of a first conductivity type, an impurity layer of a second conductivity type provided within the semiconductor substrate, an impurity region of the second conductivity type that is connected, within the semiconductor substrate, to the impurity layer, and separates a first region of the semiconductor substrate from a second region by surrounding the first region of the semiconductor substrate together with the impurity layer, a first well and second well of the second conductivity type that are provided on the impurity layer via at least a semiconductor layer of the first conductivity type, and a plurality of transistors provided to the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type; an impurity layer of a second conductivity type disposed within the semiconductor substrate; an impurity region of the second conductivity type that is connected to the impurity layer within the semiconductor substrate, the impurity region and the impurity layer separating a first region of the semiconductor substrate from a second region of the semiconductor substrate by surrounding the first region of the semiconductor substrate; a first well and a second well of the second conductivity type disposed in the first region of the semiconductor substrate and separated from the impurity layer by at least a semiconductor layer of the first conductivity type; and a plurality of transistors disposed in the semiconductor substrate.