Semiconductor device

摘要

Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions.

主权项

1. A semiconductor device comprising:
a substrate including a first region and a second region different from the first region; a first active pattern protruding upwardly from the substrate in the first region and a second active pattern protruding upwardly from the substrate in the second region; first gate structures crossing over the first active pattern and being spaced apart from each other by a first distance and second gate structures crossing over the second active pattern and being spaced apart from each other by a second distance; a first source/drain region disposed on the first active pattern between the first gate structures; and a second source/drain region disposed on the second active pattern between the second gate structures, wherein the first source/drain region includes a lower portion in contact with the first active pattern and an upper portion in contact with the lower portion and spaced apart from the first active pattern, the upper portion including a first upper portion having a width substantially increasing as it extends away from the substrate and a second upper portion having a width substantially decreasing as it extends away from the substrate, and wherein the second source/drain region includes a first portion in contact with the second active pattern and having a width substantially increasing as it extends away from the substrate, and a second portion in contact with the first portion, spaced apart from the second active pattern, and having a width substantially decreasing as it extends away from the substrate.