Hybrid phase field effect transistor

摘要

An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The transistor structure comprises a first contact region and a second contact region on the device layer at opposite sides of the gate electrode. A trench is formed in the first insulating layer over the first contact region. A metal-insulator phase transition material layer with a S-shaped IV characteristic is deposited in the trench or in the via of the metallization layer above on the source side.

主权项

1. An electronic device, comprising:
a gate electrode on a substrate, a pair of source/drain regions on the substrate at opposite sides of the gate electrode; a pair of contact layers coupled to the pair of source/drain regions; a metallization layer that is a part of a back end metallization of the electronic device over the pair of contact layers; a trench in an insulating layer to expose a portion of the metallization layer; and a metal-insulator phase transition material layer on the portion of the metallization layer within the trench.