High voltage semiconductor devices

摘要

In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.

主权项

1. A semiconductor device comprising:
a first source of a first doping type disposed in or above a substrate; a first drain of the first doping type disposed in or above the substrate; a first fin disposed between the first source and the first drain; a first gate disposed over the first fin; and a second fin oriented in a direction different from the first fin, wherein, along a current path between the first source to the first drain, the second fin intersects a region of the first fin between the first gate and the first drain, wherein the first source, the first drain, the first fin, the first gate, and the second fin are different regions of a common transistor.