发明名称 |
Hydrogenation method and hydrogenation apparatus |
摘要 |
A hydrogenation method according to the present invention includes preparing a plasma generation section (20), preparing a hermetic member (30), disposing an amorphous silicon film (S) inside the hermetic member (30), and performing plasma treatment on the amorphous silicon film (S) in a manner that the plasma generation section (20) allows a gas at a pressure around an atmospheric pressure containing a hydrogen gas to generate plasma in at least a partial region inside the hermetic member (30). Suitably, the disposing an amorphous silicon film (S) includes forming the amorphous silicon film (S) inside the hermetic member (30) with the use of a solution in which a silane compound is dissolved. |
申请公布号 |
US9455152(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201214235055 |
申请日期 |
2012.07.19 |
申请人 |
Nissan Chemical Industries, Ltd. |
发明人 |
Kitano Katsuhisa |
分类号 |
H01L21/30;H01L21/02;H01L21/67;H01L29/16;H05H1/46;H05H1/24;H01J37/32 |
主分类号 |
H01L21/30 |
代理机构 |
Studebaker & Brackett PC |
代理人 |
Studebaker & Brackett PC |
主权项 |
1. A hydrogenation method comprising:
preparing a plasma generation section; preparing a hermetic member; supplying a gas containing a hydrogen gas to the hermetic member; disposing an amorphous silicon film inside the hermetic member; and performing plasma treatment on the amorphous silicon film in a manner that the plasma generation section allows a gas at a pressure around an atmospheric pressure containing the hydrogen gas to generate plasma in at least a partial region inside the hermetic member, wherein the supplying is performed before the amorphous silicon film is disposed, and the disposing an amorphous silicon film includes forming the amorphous silicon film inside the hermetic member to which the gas containing the hydrogen gas is supplied. |
地址 |
Tokyo JP |