发明名称 BENT NANOWIRES AND RELATED PROBING OF SPECIES
摘要 The present invention generally relates to nanoscale devices and methods, including bent nanowires and other bent nanoscale objects, and in particular, the ability to probe cells with nanoscale objects. In some aspects, nanoscale objects, including nanowires, are provided that facilitate cell probing, e.g. nanowires that are surface modified such that cells can fuse with the nanowires. Devices including nanoscale objects are provided that allow small or large scale (e.g., multiplexed) probing of cells, and related methods of making such nanoscale objects and devices, and methods of investigating cells, are provided by certain embodiments of the invention. In a related set of embodiments, the present invention is generally related to bent nanowires and other bent nanoscale objects. For instance, in one aspect, the present invention is generally related to a semiconductor nanoscale wire having at least one kink. The semiconductor nanoscale wire may be formed out of any suitable semiconductor, e.g., Si, CdS, Ge, or the like. In some embodiments, a kink in the semiconductor nanoscale wire may be at an angle of about 120° or a multiple thereof. Yet other aspects of the invention are generally directed to methods of using such nanoscale wires, kits involving such nanoscale wires, devices involving such nanoscale wires, or the like.
申请公布号 US2016282303(A1) 申请公布日期 2016.09.29
申请号 US201615047267 申请日期 2016.02.18
申请人 President and Fellows of Harvard College 发明人 Lieber Charles M.;Tian Bozhi;Xie Ping;Kempa Thomas J.;Cohen-Karni Itzhaq;Qing Quan;Duan Xiaojie
分类号 G01N27/414;H01L51/00;H01L29/06;H01L21/02 主分类号 G01N27/414
代理机构 代理人
主权项
地址 Cambridge MA US