发明名称 Electroconductive microparticles, anisotropic electroconductive material, and electroconductive connection structure
摘要 The present invention aims to provide electroconductive microparticles which are less likely to cause disconnection due to breakage of connection interfaces between electrodes and the electroconductive microparticles even under application of an impact by dropping or the like and are less likely to be fatigued even after repetitive heating and cooling, and an anisotropic electroconductive material and an electroconductive connection structure each produced using the electroconductive microparticles. The present invention relates to electroconductive microparticles each including at least an electroconductive metal layer, a barrier layer, a copper layer, and a solder layer containing tin that are laminated in said order on a surface of a core particle made of a resin or metal, the copper layer and the solder layer being in contact with each other directly, the copper layer directly in contact with the solder layer containing copper at a ratio of 0.5 to 5% by weight relative to tin contained in the solder layer.
申请公布号 US9478326(B2) 申请公布日期 2016.10.25
申请号 US201414768837 申请日期 2014.02.28
申请人 SEKISUI CHEMICAL CO., LTD. 发明人 Ishida Hiroya;Matsushita Kiyoto
分类号 H01B1/22;B23K35/26;B23K35/02;C22C13/00;H05K3/32;B22F1/02;C23C18/16;C25D5/12;H01B1/02;H01L23/00 主分类号 H01B1/22
代理机构 Wenderoth, Lind & Ponack, L.L.P. 代理人 Wenderoth, Lind & Ponack, L.L.P.
主权项 1. Electroconductive microparticles used for conductive connection of electronic circuit substrates having copper electrodes each comprising at least an electroconductive metal layer comprising copper, a barrier layer comprising nickel, a copper layer, and a solder layer containing tin that are laminated in said order on a surface of a core particle made of a resin, the copper layer and the solder layer being in contact with each other directly, the copper layer contains copper at a ratio of 0.5 to 5% by weight relative to tin contained in the solder layer.
地址 Osaka JP