| 发明名称 |
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer. |
| 申请公布号 |
US2016329430(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615069043 |
申请日期 |
2016.03.14 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHUNG Yungbin;CHO Seungkyeng;BAEK Chulhyun;CHOI Injun;JEON Bogeon;CHO Eunjeong;YANG Sunghoon |
| 分类号 |
H01L29/786;H01L23/31;H01L27/32;G02F1/1341;H01L21/02;H01L27/12;G02F1/1343;G02F1/1368;H01L23/29;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A display device comprising:
a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode on the semiconductor layer; a drain electrode on the semiconductor layer and spaced apart from the source electrode; a first passivation layer on the semiconductor layer, the source electrode and the drain electrode, wherein the first passivation layer comprises a silicon nitride-based material; a second passivation layer on the first passivation layer, wherein the second passivation layer comprises a silicon nitride-based material; and a third passivation layer on the second passivation layer, wherein the third passivation layer comprises a silicon nitride-based material, wherein a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer. |
| 地址 |
Yongin-si KR |
