SOLID STATE IMAGING ELEMENT, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE

摘要

There is provided a solid state imaging element including: an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer laminated on a flat surface of the insulation film and the lower transparent electrode film; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer. Also, there is provided a production method thereof and an electronic device.

主权项

1. An imaging element, comprising:
an insulation film laminated on a semiconductor substrate; a lower transparent electrode film formed and separated by the insulation film per pixel; a hydrophobic treatment layer disposed on an inorganic buffer layer; an organic photoelectric conversion layer laminated on the hydrophobic treatment layer; and an upper transparent electrode film laminated on the organic photoelectric conversion layer, wherein the organic photoelectric conversion layer is formed to have an orientation status such that a C axis is almost in parallel with a surface of the lower transparent electrode film and a surface of the insulation film.