发明名称 TARGET FOR ION PLATING FOR PRODUCING ZINC OXIDE-BASED THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a target for ion plating for producing a zinc oxide-based thin film which has low surface resistance, in which, even if being heated in an oxygen-containing atmosphere, the rate of a change in the surface resistance is small before and after the heating, and which has excellent heat resistance. <P>SOLUTION: The target for ion plating for producing a zinc oxide-based thin film composed of a sintered body comprising zinc oxide and indium, the ratio of the indium element contained in the sintered body is 0.003 to 30 mass%. When the crystal grain size of the sintered body is observed by a scanning electron microscope, the average crystal grain size is preferably 0.1 to 20 &mu;m. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009114538(A) 申请公布日期 2009.05.28
申请号 JP20080269691 申请日期 2008.10.20
申请人 HAKUSUI TECH CO LTD;KOCHI UNIV OF TECHNOLOGY 发明人 SENJU AKIRA;KUROIWA NOBUYUKI;YAMAMOTO YASUO;YAMAMOTO TETSUYA
分类号 C23C14/32;C04B35/453;C23C14/08;H01B5/14 主分类号 C23C14/32
代理机构 代理人
主权项
地址