Semiconductor device and manufacturing method of semiconductor device

摘要

According to one embodiment, a semiconductor device includes a semiconductor substrate made of a first semiconductor material, an element isolation insulating film, a gate electrode film, source/drain regions, a channel region, and a diffusion preventing film. The channel region is provided near a surface of the semiconductor substrate below the gate electrode film, and containing a second impurity of a predetermined conductivity type diffused therein. The diffusion preventing film is provided at an interface between the element isolation insulating film and the semiconductor substrate, and made of a second semiconductor material different from the first semiconductor material.

主权项

1. A semiconductor device comprising:
a semiconductor substrate made of a first semiconductor material; an element isolation insulating film having a predetermined depth and partitioning a predetermined element formation region of a main surface on one side of the semiconductor substrate; a gate electrode film provided through a gate insulating film above the semiconductor substrate within the element formation region and extending in a first direction; source/drain regions provided near a surface of the semiconductor substrate respectively on both sides of the gate electrode film in a second direction perpendicular to the first direction, and containing a first impurity of a predetermined conductivity type diffused therein; a channel region provided near a surface of the semiconductor substrate below the gate electrode film, and containing a second impurity of a predetermined conductivity type diffused therein; a diffusion preventing film provided at an interface between the element isolation insulating film and the semiconductor substrate, and made of a second semiconductor material different from the first semiconductor material; and a fixed charge layer provided at an interface between the diffusion preventing film and the element isolation insulating film, wherein the fixed charge layer has a fixed charge of a reverse sign to a fixed charge to be generated in the element isolation insulating film.