Method for manufacturing silicon carbide semiconductor device

摘要

Provided is a method for manufacturing a silicon carbide semiconductor device capable of preventing an increase in a cost of manufacturing one chip while favorably maintaining forward characteristics of the semiconductor device including (a) inspecting the characteristics of the forward conduction of body diodes as element structures; (b) classifying the body diode and the body diode as either a first group suitable for forward conduction or a second group unsuitable for forward conduction on the basis of an inspection result; and (c) manufacturing a silicon carbide semiconductor MOSFET that requires forward conduction using the body diode classified into the first group or manufacturing a silicon carbide semiconductor MOSFET that does not need forward conduction using the body diode classified into the second group.

主权项

1. A method for manufacturing a silicon carbide semiconductor device that has an element structure including an epitaxial layer of a first conductivity type formed on a silicon carbide semiconductor substrate of a first conductivity type and an impurity layer of a second conductivity type formed in contact with said epitaxial layer, said method comprising the steps of:
(a) inspecting characteristics of a forward conduction between said epitaxial layer and said impurity layer in said element structure; (b) classifying said element structure as a first group suitable for said forward conduction or a second group unsuitable for said forward conduction on the basis of an inspection result of said step (a); and (c) manufacturing a MOSFET device using said element structure of said first group and manufacturing a MOSFET device coupled to a Schottky diode using said element structure of said second group.