Method of forming through wiring

摘要

Provided is a method of forming a through wiring, including forming a first insulating film on a first surface and a second surface of a substrate; forming a through hole to pass through the first insulating film formed on the first surface side and the substrate; forming a second insulating film formed from a material different from that of the first insulating film on an inner wall of the through hole; forming a conductive film on the first insulating film formed on the second surface; forming an opening in the first insulating film by processing the first insulating film formed on the second surface; and filling an inner portion of the through hole with a conductive material by electrolytic plating using the conductive film exposed at the bottom portion of the through hole as a seed layer.

主权项

1. A method of forming a through wiring in a substrate using electrolytic plating, the method comprising, in stated order, steps (1)-(6):
(1) forming a first insulating film on a first surface and a second surface of the substrate, the first surface and the second surface being located at opposite sides of the substrate from each other; (2) forming a through hole to pass through the first insulating film formed on a first surface side and the substrate so that at least a part of the first insulating film formed on the second surface remains; (3) forming a second insulating film on an inner wall of the through hole, the second insulating film being formed from a material different from a material of the first insulating film; (4) forming a conductive film on the first insulating film formed on the second surface; (5) forming an opening in the first insulating film by processing the first insulating film formed on the second surface from the first surface side so that the conductive film is exposed at a terminus of the through hole on a second surface side; and (6) filling an inner portion of the through hole with a conductive material by electrolytic plating using the conductive film exposed at the terminus of the through hole as a seed layer.