| 摘要 |
PROBLEM TO BE SOLVED: To make low the dielectric constant of a ferroelectric film, which is used for a ferroelectric storage element, and to enable making high the melting point of the film by a method, wherein the film having hysteresis characteristic is constituted using a specified mixed crystal. SOLUTION: A ferroelectric film 28 is provided on a channel formation region CH, formed in a silicon semiconductor substrate 22 via a gate oxide film 24 and a floating gate 26, and the film 28 is constituted using a mixed crystal which is shown by (A1y1 to Anyn )2 (B1x1 to Bmxm )2 07 , where x1+ to +xm=1, the y1+ to +yn=1 and any of the x1, the xw to xm, the y1 and the y2 to yn are used as the condition of 0 or more to 1 or less. Two of the x1, the x2 to xm, the y1 and the y2 to yn are used as the condition of more than 1 to less than 1. Moreover, A1 and A2 to An are made such that they are respectively different kinds of elements from among the elements of a group A and the B1, and the B2 to Bm are made such that they are respectively different kinds of elements from among the elements of a group B. Moreover, the group A is made it set so that it is a group of a group IIa element, a group IIIa element and a lanthanum series of elements and the group B is set so that it is a group of Ti, Nb, Ta and the like. |
