| 摘要 |
PROBLEM TO BE SOLVED: To deposit a film of high quality at a high speed by suppressing the deposition of particles on a substrate. SOLUTION: A rotating electrode 18 is confronted with a substrate, and, while plasma is generated on the space therebetween, this plasma is fed with reaction gas to cause chemical reaction, by which a thin film is formed on the substrate. By providing a means of heating the electrode 18 and increasing the surface temp. of the electrode, the generation of particles is suppressed. Moreover, in consideration of the formation of a thin film on the surface by the electrode heating, the control of fixedly retaining the effective distance between the circumferential face of the electrode and the surface of the substrate is executed, e.g. by lowering a substrate carrying stand 12 in accordance with the increase of the total film forming time.
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