发明名称 METHOD FOR MANUFACTURING WAFER HAVING UNIFORMITY
摘要 PURPOSE: A method for manufacturing a wafer having the uniformity is provided to offer the wafer having a uniform thickness by compensating the thickness of an insulation film at an edge of the wafer. CONSTITUTION: An insulation film(11) and a photoresist are successively layered on the wafer(10). After exposing and developing the photoresist, the insulation film on a center part(a) is removed by the dry or wet etching. A surface of the wafer is etched back again in order to flatten the surface of the wafer after removing the photoresist of an edge part(b). At a silicon wafer state before a device such as a transistor is not formed on the substrate, the insulation film of the edge part is previously compensated as much as the thickness becoming thin on a process forming the insulation layer.
申请公布号 KR20020060334(A) 申请公布日期 2002.07.18
申请号 KR20010001354 申请日期 2001.01.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YEONG DAE;LEE, EUN CHEOL
分类号 H01L21/30;(IPC1-7):H01L21/30 主分类号 H01L21/30
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