发明名称 |
METHOD FOR MANUFACTURING WAFER HAVING UNIFORMITY |
摘要 |
PURPOSE: A method for manufacturing a wafer having the uniformity is provided to offer the wafer having a uniform thickness by compensating the thickness of an insulation film at an edge of the wafer. CONSTITUTION: An insulation film(11) and a photoresist are successively layered on the wafer(10). After exposing and developing the photoresist, the insulation film on a center part(a) is removed by the dry or wet etching. A surface of the wafer is etched back again in order to flatten the surface of the wafer after removing the photoresist of an edge part(b). At a silicon wafer state before a device such as a transistor is not formed on the substrate, the insulation film of the edge part is previously compensated as much as the thickness becoming thin on a process forming the insulation layer.
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申请公布号 |
KR20020060334(A) |
申请公布日期 |
2002.07.18 |
申请号 |
KR20010001354 |
申请日期 |
2001.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YEONG DAE;LEE, EUN CHEOL |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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主权项 |
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地址 |
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