ADAPTIVE LITHOGRAPHIC CRITICAL DIMENSION ENHANCEMENT

摘要

A method for enhancing adaptive lithographic critical dimension is provided to improve uniformity of critical dimension in a lithographic system by including an exposure apparatus for exposing a substrate, a track apparatus coupled to the exposure apparatus, and a plurality of process modules. The characteristics of a substrate processed by a lithographic system are measured. Whether the measured characteristics of the substrate is uniform is checked based upon predetermined substrate profile information. If the measured characteristics of the substrate is not uniform, the exposure dose of the lithographic system in the exposure apparatus is controlled based upon the measured characteristics of the substrate so that correction exposure data is calculated to correct the ununiformity of the characteristics of the substrate. The substrate is exposed according to the correction exposure data.