| 发明名称 |
Method of making a MOS transistor having a drift region with a trench |
| 摘要 |
Production of a DMOS transistor in a semiconductor body (10) comprises producing a gradient of a dopant concentration in the lateral direction (36) by implanting a dopant to acquire only a partial region (40) of the base region (30).
|
| 申请公布号 |
EP1517361(A2) |
申请公布日期 |
2005.03.23 |
| 申请号 |
EP20040022111 |
申请日期 |
2004.09.17 |
| 申请人 |
ATMEL GERMANY GMBH |
发明人 |
DUDEK, VOLKER, DR.;GRAF, MICHAEL, DR. |
| 分类号 |
H01L21/336;H01L21/265;H01L29/06;H01L29/08;H01L29/36;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
