| 摘要 |
A ferroelectric capacitor is formed above a semiconductor substrate (10), and then interlayer insulating films (48, 50, 52) are formed to cover the ferroelectric capacitor. Then, a contact hole (54) which reaches an upper electrode (40) is formed on the interlayer insulating films (48, 50, 52). A wiring (58) electrically connected to the upper electrode (40) is formed on the interlayer insulating films (48, 50, 52) through the contact hole (54). At the time of forming the upper electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c), which is composed of a noble metal exhibiting less catalytic action than Pt and has a thickness of 150nm or less, is formed on the conductive oxide films (40a, 40b). |
