Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

摘要

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method The invention relates to a bipolar power semiconductor component comprising a semiconductor body ( 1 ), in which a p-doped emitter ( 8 ), an n-doped base ( 7 ), a p-doped base ( 6 ) and an n-doped main emitter ( 5 ) are arranged successively in a vertical direction (v). The p-doped emitter ( 8 ) has a number of heavily p-doped zones ( 82 ) having a locally increased p-type doping. The invention furthermore relates to a method for producing a power semiconductor component.