发明名称 Metal line structures and methods of forming the same
摘要 Example embodiments may provide metal line structures, and example methods may include forming the same. Example embodiment metal line structures may include a first metal line on a substrate, a first barrier metal layer on sidewalls and a lower surface of the first metal line, a first insulating layer covering the first metal line, a second metal line on the first insulating layer, a contact plug passing through the first insulating layer to electrically connect the first metal line and the second metal line, and a second barrier metal layer on sidewalls and a lower surface of the contact plug and the second metal line. The first barrier metal layer and the second barrier metal layer may contact each other.
申请公布号 US2008048339(A1) 申请公布日期 2008.02.28
申请号 US20070892226 申请日期 2007.08.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN JEONG-HOON;SHIN HEON-JONG
分类号 H01L23/528;H01L21/4763 主分类号 H01L23/528
代理机构 代理人
主权项
地址